- Patent Title: Method for germanium enrichment around the channel of a transistor
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Application No.: US17445747Application Date: 2021-08-24
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Publication No.: US11646196B2Publication Date: 2023-05-09
- Inventor: Heimanu Niebojewski , Christophe Plantier , Shay Reboh
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR 08832 2020.08.31
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/165 ; H01L29/66
Abstract:
Making of a transistor structure comprising in this order:
forming semiconductor blocks made of SixGe1-x over the surface semiconductor layer and on either side of insulating spacers, the semiconductor blocks having lateral facets,
growth of a silicon-based layer over the semiconductor blocks, so as to fill cavities located between said facets and said insulating spacers,
thermal oxidation to perform a germanium enrichment of semiconductor portions of the surface semiconductor layer disposed on either side of the spacers.
forming semiconductor blocks made of SixGe1-x over the surface semiconductor layer and on either side of insulating spacers, the semiconductor blocks having lateral facets,
growth of a silicon-based layer over the semiconductor blocks, so as to fill cavities located between said facets and said insulating spacers,
thermal oxidation to perform a germanium enrichment of semiconductor portions of the surface semiconductor layer disposed on either side of the spacers.
Public/Granted literature
- US20220068638A1 METHOD FOR GERMANIUM ENRICHMENT AROUND THE CHANNEL OF A TRANSISTOR Public/Granted day:2022-03-03
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