Invention Grant
- Patent Title: Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
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Application No.: US16986274Application Date: 2020-08-06
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Publication No.: US11646197B2Publication Date: 2023-05-09
- Inventor: Timothee Julien Vincent Blanquart , Mitsuya Utsuno , Yoshio Susa , Atsuki Fukazawa , Toshio Nakanishi
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer L.L.P.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/768 ; H01L21/762 ; C23C16/26 ; C23C16/455 ; C23C16/50
Abstract:
A film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.
Information query
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