Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17188595Application Date: 2021-03-01
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Publication No.: US11646287B2Publication Date: 2023-05-09
- Inventor: Satoru Takaku
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP 2020125554 2020.07.22
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/31 ; H01L23/498

Abstract:
A semiconductor device includes an insulating substrate, a wiring, a semiconductor chip and a resin layer. The wiring is provided on the insulating substrate. The wiring board includes (i) an insulating material and (ii) a pad exposed relative to the insulating material and electrically connected to the wiring. A height of the insulating material in a vertical direction of the wiring board varies along the wiring board. The semiconductor chip includes a bump connected to the pad on a first surface of the semiconductor chip. The resin layer covers a periphery of the bump between the wiring board and the semiconductor chip.
Public/Granted literature
- US20220028815A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-01-27
Information query
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