Invention Grant
- Patent Title: Semiconductor device, manufacturing method thereof, and power generating device
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Application No.: US16765967Application Date: 2019-12-18
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Publication No.: US11646451B2Publication Date: 2023-05-09
- Inventor: Zhidong Wang , Lijia Zhou , Quanguo Zhou , Ronghua Lan
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE Technology Group Co., Ltd.
- Current Assignee: BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: The Webb Law Firm
- Priority: CN 1910001406.4 2019.01.02
- International Application: PCT/CN2019/126264 2019.12.18
- International Announcement: WO2020/140757A 2020.07.09
- Date entered country: 2020-05-21
- Main IPC: H01M10/0585
- IPC: H01M10/0585 ; H01M50/284 ; H01M10/04 ; H02N1/04 ; H01M6/40 ; H01L27/13 ; H02J7/32

Abstract:
The present disclosure provides a semiconductor device, a manufacturing method thereof, and a power generating device. The semiconductor device includes a substrate and a thin film battery on the substrate. The thin film battery includes at least one anode structure and at least one cathode structure on the substrate, and a solid electrolyte layer spacing the at least one anode structure apart from the at least one cathode structure. Each anode structure includes an anode current collector on a surface of the substrate and an anode layer on the surface of the substrate and connected to a side surface of the anode current collector. Each cathode structure includes a cathode current collector on the surface of the substrate and a cathode layer on the surface of the substrate and connected to a side surface of the cathode current collector.
Public/Granted literature
- US20210226257A1 Semiconductor Device, Manufacturing Method Thereof, and Power Generating Device Public/Granted day:2021-07-22
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