- 专利标题: Integrated circuit and method of forming same
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申请号: US17031547申请日: 2020-09-24
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公开(公告)号: US11651133B2公开(公告)日: 2023-05-16
- 发明人: Po-Sheng Wang , Chao Yuan Cheng , Chien-Chi Tien , Yangsyu Lin
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Hauptman Ham, LLP
- 主分类号: G06F30/392
- IPC分类号: G06F30/392 ; H01L27/02 ; H01L27/118 ; G06F119/18
摘要:
A method of forming an integrated circuit includes placing a first cell layout design of the integrated circuit on a layout design, and manufacturing the integrated circuit based on the layout design. Placing the first cell layout design includes placing a first active region layout pattern adjacent to a first cell boundary, placing a second active region layout pattern adjacent to a second cell boundary, and placing a first set of active region layout patterns between the first and second active region layout patterns, according to a first set of guidelines. The first set of guidelines includes selecting transistors of a first type with a first driving strength and transistors of a second type with a second driving strength. In some embodiments, the first, second and first set of active region layout patterns extend in the first direction, and are on a first layout level.
公开/授权文献
- US20210279396A1 INTEGRATED CIRCUIT AND METHOD OF FORMING SAME 公开/授权日:2021-09-09
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