Invention Grant
- Patent Title: Metrology method
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Application No.: US16666196Application Date: 2019-10-28
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Publication No.: US11652007B2Publication Date: 2023-05-16
- Inventor: Su-Horng Lin , Chi-Ming Yang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: G01N23/00
- IPC: G01N23/00 ; H01L21/66 ; G01N23/02 ; G01N23/083 ; G01N23/201
Abstract:
A method includes illuminating a wafer by an X-ray, detecting a spatial domain pattern produced when illuminating the wafer by the X-ray, identifying at least one peak from the detected spatial domain pattern, and analyzing the at least one peak to obtain a morphology of a transistor structure of the wafer.
Public/Granted literature
- US20200066606A1 METROLOGY METHOD Public/Granted day:2020-02-27
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