Invention Grant
- Patent Title: Semiconductor device, method of manufacturing semiconductor device, and module
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Application No.: US16867266Application Date: 2020-05-05
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Publication No.: US11652040B2Publication Date: 2023-05-16
- Inventor: Bin Zhang , Akinori Nii , Taro Nishioka
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP 2019090478 2019.05.13
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/31 ; H01L21/48
Abstract:
There is provided a semiconductor device including: a lead frame including a first opening portion; a resin filled in the first opening portion; and a semiconductor element electrically connected to the lead frame, wherein a side wall surface of the lead frame in the first opening portion has a larger average surface roughness than an upper surface of the lead frame.
Information query
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