Invention Grant
- Patent Title: Semiconductor devices including thick pad
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Application No.: US17736536Application Date: 2022-05-04
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Publication No.: US11652076B2Publication Date: 2023-05-16
- Inventor: Taeho Ko , Daehee Lee , Hyunchul Jung
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20200005173 2020.01.15
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L23/00

Abstract:
A semiconductor device may include a semiconductor chip in an encapsulant. A first insulation layer may be disposed on the encapsulant and the semiconductor chip. A horizontal wiring and a primary pad may be disposed on the first insulation layer. A secondary pad may be disposed on the primary pad. A second insulation layer covering the horizontal wiring may be disposed on the first insulation layer. A solder ball may be disposed on the primary pad and the secondary pad. The primary pad may have substantially the same thickness as a thickness of the horizontal wiring.
Public/Granted literature
- US20220262757A1 SEMICONDUCTOR DEVICES INCLUDING THICK PAD Public/Granted day:2022-08-18
Information query
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