Invention Grant
- Patent Title: Inspection apparatus and inspection method for inspecting light-emitting diodes
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Application No.: US17135874Application Date: 2020-12-28
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Publication No.: US11656181B2Publication Date: 2023-05-23
- Inventor: Yan-Rung Lin , Chih-Hsiang Liu , Chung-Lun Kuo , Hsiang-Chun Wei , Yeou-Sung Lin , Chieh-Yi Lo
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Priority: TW 7146378 2018.12.21
- Main IPC: G01N21/66
- IPC: G01N21/66 ; G01N21/88

Abstract:
An inspection apparatus for inspecting a light-emitting diode wafer is provided. The inspection apparatus includes a Z-axis translation stage, a sensing probe, a height measurement module, a carrier, an illumination light source, and a processing device. The sensing probe is integrated with the Z-axis translation stage. The Z-axis translation stage is adapted to drive the sensing probe to move in a Z axis. The sensing probe includes a photoelectric sensor, a beam splitter, and a photoelectric sensing structure. One of the photoelectric sensor of the sensing probe and the height measurement module is adapted to receive a light beam penetrating the beam splitter, and the other one of the photoelectric sensor of the sensing probe and the height measurement module is adapted to receive a light beam reflected by the beam splitter. The carrier is configured to carry the light-emitting diode wafer. The illumination light source is configured to emit an illumination beam to irradiate the light-emitting diode wafer. An inspection method for inspecting light-emitting diodes is also provided.
Public/Granted literature
- US20210231570A1 INSPECTION APPARATUS AND INSPECTION METHOD FOR INSPECTING LIGHT-EMITTING DIODES Public/Granted day:2021-07-29
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