- 专利标题： Semiconductor device and manufacturing method of the same
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申请号： US17224743申请日： 2021-04-07
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公开(公告)号： US11658211B2公开(公告)日： 2023-05-23
- 发明人: Yoshiki Yamamoto , Hideki Makiyama , Toshiaki Iwamatsu , Takaaki Tsunomura
- 申请人： Renesas Electronics Corporation
- 申请人地址： JP Tokyo
- 专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP 2012011213 2012.01.23 JP 2012163907 2012.07.24
- 主分类号： H01L21/82
- IPC分类号： H01L21/82 ; H01L29/08 ; H01L29/10 ; H01L29/786 ; H01L29/66 ; H01L27/12 ; H01L29/417 ; H01L29/423 ; H01L29/78 ; H01L21/768 ; H01L21/8238 ; H01L21/84 ; H01L21/265 ; H01L29/06 ; H01L21/74 ; H01L21/8234
摘要：
Occurrence of short-channel characteristics and parasitic capacitance of a MOSFET on a SOI substrate is prevented.
A sidewall having a stacked structure obtained by sequentially stacking a silicon oxide film and a nitride film is formed on a side wall of a gate electrode on the SOI substrate. Subsequently, after an epitaxial layer is formed beside the gate electrode, and then, the nitride film is removed. Then, an impurity is implanted into an upper surface of the semiconductor substrate with using the gate electrode and the epitaxial layer as a mask, so that a halo region is formed in only a region of the upper surface of the semiconductor substrate which is right below a vicinity of both ends of the gate electrode.
A sidewall having a stacked structure obtained by sequentially stacking a silicon oxide film and a nitride film is formed on a side wall of a gate electrode on the SOI substrate. Subsequently, after an epitaxial layer is formed beside the gate electrode, and then, the nitride film is removed. Then, an impurity is implanted into an upper surface of the semiconductor substrate with using the gate electrode and the epitaxial layer as a mask, so that a halo region is formed in only a region of the upper surface of the semiconductor substrate which is right below a vicinity of both ends of the gate electrode.
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