- 专利标题： Wide bandgap field effect transistors with source connected field plates
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申请号： US15696050申请日： 2017-09-05
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公开(公告)号： US11664429B2公开(公告)日： 2023-05-30
- 发明人: Yifeng Wu , Primit Parikh , Umesh Mishra , Marcia Moore
- 申请人： CREE, INC.
- 申请人地址： US CA Goleta
- 专利权人： Wolfspeed, Inc.
- 当前专利权人： Wolfspeed, Inc.
- 当前专利权人地址： US NC Durham
- 代理机构： Myers Bigel, P.A.
- 主分类号： H01L29/812
- IPC分类号： H01L29/812 ; H01L29/40 ; H01L29/417 ; H01L29/423 ; H01L29/20
摘要：
A field effect transistor comprising a buffer and channel layer formed successively on a substrate. A source electrode, drain electrode, and gate are all formed in electrical contact with the channel layer, with the gate between the source and drain electrodes. A spacer layer is formed on at least a portion of a surface of the channel layer between the gate and drain electrode and a field plate is formed on the spacer layer isolated from the gate and channel layer. The spacer layer is electrically connected by at least one conductive path to the source electrode, wherein the field plate reduces the peak operating electric field in the device.
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