Invention Grant
- Patent Title: Semiconductor device and method, where a dielectric material directly contacts a high-k dielectric material and first and second transmission lines
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Application No.: US17587581Application Date: 2022-01-28
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Publication No.: US11664566B2Publication Date: 2023-05-30
- Inventor: Jiun Yi Wu , Chien-Hsun Lee , Chewn-Pu Jou , Fu-Lung Hsueh
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01P3/08
- IPC: H01P3/08 ; H01P11/00 ; H01P3/02 ; H01P3/06
Abstract:
A semiconductor device includes a first transmission line. The semiconductor device includes a second transmission line. The semiconductor device includes a high-k dielectric material between the first transmission line and the second transmission line, wherein the high-k dielectric material partially covers each of the first transmission line and the second transmission line. The semiconductor device further includes a dielectric material directly contacting the high-k dielectric material, wherein the dielectric material has a different dielectric constant from the high-k dielectric material, and the dielectric material directly contacts each of the first transmission line and the second transmission line.
Public/Granted literature
- US20220158319A1 SEMICONDUCTOR DEVICE INCLUDING TRANSMISSION LINES AND METHOD OF FORMING THE SAME Public/Granted day:2022-05-19
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