A method of manufacturing a device is provided. The method includes forming a first cavity in a first substrate with the first cavity having a first depth. A second cavity is formed in a second substrate with the second cavity having a second depth. The first cavity and the second cavity are aligned with each other. The first substrate is affixed to the second substrate to form a waveguide substrate having a hollow waveguide with a first dimension substantially equal to the first depth plus the second depth. A conductive layer is formed on the sidewalls of the hollow waveguide. The waveguide substrate is placed over a packaged semiconductor device, the hollow waveguide aligned with a launcher of the packaged semiconductor device.