- Patent Title: One-time programmable memory cell and fabrication method thereof
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Application No.: US17314061Application Date: 2021-05-07
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Publication No.: US11665891B2Publication Date: 2023-05-30
- Inventor: Kuo-Hsing Lee , Chang-Chien Wong , Sheng-Yuan Hsueh , Ching-Hsiang Tseng , Chi-Horn Pai , Shih-Chieh Hsu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN 2110393219.2 2021.04.13
- Main IPC: H10B20/20
- IPC: H10B20/20

Abstract:
A one-time programmable (OTP) memory cell includes a substrate comprising an active area surrounded by an isolation region, a transistor disposed on the active area, and a diffusion-contact fuse electrically coupled to the transistor. The diffusion-contact fuse includes a diffusion region in the active area, a silicide layer on the diffusion region, and a contact partially landed on the silicide layer and partially landed on the isolation region.
Public/Granted literature
- US20220328503A1 ONE-TIME PROGRAMMABLE MEMORY CELL AND FABRICATION METHOD THEREOF Public/Granted day:2022-10-13
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