- Patent Title: Simulation-assisted alignment between metrology image and design
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Application No.: US17338927Application Date: 2021-06-04
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Publication No.: US11669018B2Publication Date: 2023-06-06
- Inventor: Te-Sheng Wang
- Applicant: ASML NETHERLANDS B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML NETHERLANDS B.V.
- Current Assignee: ASML NETHERLANDS B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F7/00

Abstract:
A method including: simulating an image or characteristics thereof, using characteristics of a design layout and of a patterning process, determining deviations between the image or characteristics thereof and the design layout or characteristics thereof; aligning a metrology image obtained from a patterned substrate and the design layout based on the deviations, wherein the patterned substrate includes a pattern produced from the design layout using the patterning process; and determining a parameter of a patterned substrate from the metrology image aligned with the design layout.
Public/Granted literature
- US20210294219A1 SIMULATION-ASSISTED ALIGNMENT BETWEEN METROLOGY IMAGE AND DESIGN Public/Granted day:2021-09-23
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