Invention Grant
- Patent Title: LDMOS and fabricating method of the same
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Application No.: US17884599Application Date: 2022-08-10
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Publication No.: US11670713B2Publication Date: 2023-06-06
- Inventor: Chung-Yen Feng , Chen-An Kuo , Ching-Wei Teng , Po-Chun Lai
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN 2110207876.3 2021.02.24
- The original application number of the division: US17224108 2021.04.06
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L29/78 ; H01L29/10 ; H01L29/66 ; H01L21/285 ; H01L21/74 ; H01L29/45
Abstract:
An LDMOS includes a semiconductor substrate. A well is disposed within the semiconductor substrate. A body region is disposed within the well. A first gate electrode is disposed on the semiconductor substrate. A source electrode is disposed at one side of the first gate electrode. The source electrode includes a source contact area and numerous vias. The vias connect to the source contact area. The vias extend into the semiconductor substrate. A first drain electrode is disposed at another side of the first gate electrode and is opposed to the source electrode.
Public/Granted literature
- US20220384638A1 LDMOS AND FABRICATING METHOD OF THE SAME Public/Granted day:2022-12-01
Information query
IPC分类:
