A processing device of a memory sub-system is configured to identify a plurality of blocks assigned to a first voltage bin of a plurality of voltage bins of a memory device; identify a subset of the plurality of blocks having a time after program (TAP) within a predetermined threshold period of time from a second TAP associated with a transition boundary between the first voltage bin and a subsequent voltage bin of the plurality of voltage bins; determine a threshold voltage offset associated with the subset of blocks; and associate the threshold voltage offset with the subsequent voltage bin.