- 专利标题： Method of manufacturing a semiconductor device and a semiconductor device
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申请号： US17109895申请日： 2020-12-02
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公开(公告)号： US11677015B2公开(公告)日： 2023-06-13
- 发明人: Ya-Wen Chiu , Yi Che Chan , Lun-Kuang Tan , Zheng-Yang Pan , Cheng-Po Chau , Pin-Ju Liang , Hung-Yao Chen , De-Wei Yu , Yi-Cheng Li
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： McDermott Will & Emery LLP
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L29/66 ; H01L27/092 ; H01L29/78 ; H01L29/161 ; H01L29/10 ; H01L21/02
摘要：
In a method of manufacturing a semiconductor device, a fin structure having a channel region protruding from an isolation insulating layer disposed over a semiconductor substrate is formed, a cleaning operation is performed, and an epitaxial semiconductor layer is formed over the channel region. The cleaning operation and the forming the epitaxial semiconductor layer are performed in a same chamber without breaking vacuum.
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