- 专利标题： Methods of manufacturing semiconductor devices
-
申请号： US17224365申请日： 2021-04-07
-
公开(公告)号： US11682555B2公开(公告)日： 2023-06-20
- 发明人: Ji-woon Park , Jin-su Lee , Hyung-suk Jung
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR 20180118139 2018.10.04
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; C23C16/04 ; H01L21/768 ; H01L21/285 ; H01L49/02
摘要：
A method of manufacturing a semiconductor device includes forming a three-dimensional (3D) structure on a substrate, forming an adsorption control layer to cover an upper portion of the 3D structure, and forming a material layer on the adsorption control layer and on a lower portion of the 3D structure that is not covered by the adsorption control layer, wherein a minimum thickness of the material layer on the adsorption control layer is less than a maximum thickness of the material layer on the lower portion of the 3D structure.
公开/授权文献
- US20210225636A1 METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES 公开/授权日：2021-07-22
信息查询
IPC分类:
