- 专利标题: Hybrid metal line structure
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申请号: US17212113申请日: 2021-03-25
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公开(公告)号: US11682618B2公开(公告)日: 2023-06-20
- 发明人: Pokuan Ho , Chia-Tien Wu , Hsin-Ping Chen , Wei-Chen Chu
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Eschweiler & Potashnik, LLC
- 主分类号: H01L23/522
- IPC分类号: H01L23/522 ; H01L21/768 ; H01L23/528
摘要:
The present disclosure relates to an integrated chip that includes a substrate, a first metal line, and a hybrid metal line. The first metal line includes a first metal material and is within a first interlayer dielectric (ILD) layer over the substrate. The hybrid metal line is also within the first ILD layer. The hybrid metal line includes a pair of first metal segments that comprise the first metal material. The hybrid metal line further includes a second metal segment that comprises a second metal material that is different from the first metal material. The second metal segment is laterally between the pair of first metal segments.
公开/授权文献
- US20220310508A1 HYBRID METAL LINE STRUCTURE 公开/授权日:2022-09-29
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