Invention Grant
- Patent Title: Semiconductor device with a heterogeneous solder joint and method for fabricating the same
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Application No.: US17361950Application Date: 2021-06-29
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Publication No.: US11682644B2Publication Date: 2023-06-20
- Inventor: Swee Kah Lee , Sook Woon Chan , Fong Mei Lum , Joachim Mahler , Muhammad Muhammat Sanusi
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE 202117678.3 2020.07.03
- Main IPC: H01L23/00
- IPC: H01L23/00

Abstract:
A method for fabricating a semiconductor device with a heterogeneous solder joint includes: providing a semiconductor die; providing a coupled element; and soldering the semiconductor die to the coupled element with a first solder joint. The first solder joint includes: a solder material including a first metal composition; and a coating including a second metal composition, different from the first metal composition, the coating at least partially covering the solder material. The second metal composition has a greater stiffness and/or a higher melting point than the first metal composition.
Public/Granted literature
- US20220005778A1 SEMICONDUCTOR DEVICE WITH A HETEROGENEOUS SOLDER JOINT AND METHOD FOR FABRICATING THE SAME Public/Granted day:2022-01-06
Information query
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