Invention Grant
- Patent Title: Semiconductor substrate and display device
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Application No.: US17184708Application Date: 2021-02-25
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Publication No.: US11682732B2Publication Date: 2023-06-20
- Inventor: Hirotaka Hayashi , Masataka Ikeda
- Applicant: Japan Display Inc.
- Applicant Address: JP Tokyo
- Assignee: Japan Display Inc.
- Current Assignee: Japan Display Inc.
- Current Assignee Address: JP Tokyo
- Agency: Maier & Maier, PLLC
- Priority: JP 2020033370 2020.02.28
- Main IPC: H01L29/786
- IPC: H01L29/786 ; G02F1/167

Abstract:
According to one embodiment, a semiconductor layer includes a base, a scanning line disposed over the base, a signal line disposed over the base, a transistor overlapping the scanning line and the signal line and including a first oxide semiconductor layer connected to the signal line, and second oxide semiconductor layers disposed in a same layer as the first oxide semiconductor layer. The second oxide semiconductor layers are disposed around the transistor, and the second oxide semiconductor layers are floating.
Public/Granted literature
- US20210273108A1 SEMICONDUCTOR SUBSTRATE AND DISPLAY DEVICE Public/Granted day:2021-09-02
Information query
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