A variable resistance memory device and a method of manufacturing the same, the variable resistance memory device including a substrate including a first memory region and a second memory region; a plurality of first memory cells on the first memory region; and a plurality of second memory cells on the second memory region, wherein each of the first memory cells includes a first resistance element and a selection element, each of the second memory cells includes a second resistance element, and a maximum value of a variable resistance of the second resistance element is less than a maximum value of a variable resistance of the first resistance element.