- 专利标题: Semiconductor memory subword driver circuits and layout
-
申请号: US17028929申请日: 2020-09-22
-
公开(公告)号: US11688455B2公开(公告)日: 2023-06-27
- 发明人: Kyuseok Lee
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Dorsey & Whitney LLP
- 主分类号: G11C8/08
- IPC分类号: G11C8/08 ; G11C11/408 ; G11C11/4097 ; H01L27/105 ; H01L29/423 ; G11C8/14
摘要:
In some examples, a subword driver block of a memory device includes a first active region and a second active region adjacent to each other. The first active region forms drains/sources of a first and second transistors in a first region; the second active region forms drains/sources of a third and fourth transistors in a second region, where the first and second regions are adjacent to each other. The first, second, third and fourth transistors are coupled to a common non-active potential via a shared contact overlaid over a merged region between the first and second regions. The first and second active regions may comprise N+ diffusion materials.
公开/授权文献
- US20220093158A1 MEMORY SUBWORD DRIVER CIRCUITS AND LAYOUT 公开/授权日:2022-03-24
信息查询