A method for producing a semiconductor-on-insulator type substrate includes epitaxial deposition of a first semiconductor layer on a smoothing layer supported by a monocrystalline support substrate to form a donor substrate; production of an assembly by contacting the donor substrate with a receiver substrate; transfer, onto the receiver substrate, of the first semiconductor layer, the smoothing layer and a portion of the support substrate; and selective etching of the portion of the support substrate relative to the smoothing layer. The epitaxial deposition of the first semiconductor layer can be preceded by a surface preparation annealing of the support substrate at a temperature greater than 650° C. After the selective etching of the portion of the support substrate, selective etching of the smoothing layer relative to the first semiconductor layer and epitaxial deposition of a second semiconductor layer on the first semiconductor layer may be carried out in an epitaxy frame.