Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17189955Application Date: 2021-03-02
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Publication No.: US11688726B2Publication Date: 2023-06-27
- Inventor: Yasunori Iwashita , Shinya Arai , Keisuke Nakatsuka , Takahiro Tomimatsu , Ryo Tanaka
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP 20156722 2020.09.17
- Main IPC: H01L25/18
- IPC: H01L25/18 ; H01L23/00

Abstract:
According to one embodiment, a semiconductor device includes a first chip, and a second chip bonded to the first chip. The first chip includes: a substrate; a transistor provided on the substrate; a plurality of first wirings provided above the transistor; and a plurality of first pads provided above the first wirings. The second chip includes: a plurality of second pads coupled to the plurality of first pads, respectively; a plurality of second wirings provided above the second pads; and a memory cell array provided above the second wirings. The first wiring, the first pad, the second pad, and the second wiring are coupled to one another in series to form a first pattern.
Public/Granted literature
- US20220085003A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-03-17
Information query
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