An image sensing device is provided to include a substrate, a photoelectric conversion region disposed in the substrate and configured to generate photocharges in response to incident light, a floating diffusion (FD) region disposed in the substrate and configured to store the photocharges generated in the photoelectric conversion region, and first and second transfer gates having portions disposed to overlap each other and configured to transmit the photocharges from the photoelectric conversion region to the floating diffusion (FD) region.