Invention Grant
- Patent Title: IC including capacitor having segmented bottom plate
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Application No.: US17409080Application Date: 2021-08-23
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Publication No.: US11688760B2Publication Date: 2023-06-27
- Inventor: Jeffrey West , Mrinal Das , Byron Williams , Thomas Bonifield , Maxim Franke
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Yudong Kim; Frank D. Cimino
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/528 ; H01L23/52 ; H01L23/495 ; H01L23/31 ; H01L49/02 ; H01L23/00

Abstract:
An IC includes a substrate including circuitry configured to provide a receiver or a transmitter circuit. A metal stack is over the semiconductor surface including a top metal layer and a plurality of lower metal layers. An isolation capacitor includes the top metal layer as a top plate that is electrically connected to a first node; and a top dielectric layer on the top plate with a top plate dielectric aperture. One of the plurality of lower metal layers provides a bottom plate that includes a plurality of spaced apart segments. A capacitor dielectric layer is between the top and bottom plate. The segments include a first segment electrically connected to a second node and at least a second segment electrically connected to a third node, with separation regions located between adjacent spaced apart segments. The top plate covers at least a portion of each of the separation regions.
Public/Granted literature
- US20230058511A1 IC INCLUDING CAPACITOR HAVING SEGMENTED BOTTOM PLATE Public/Granted day:2023-02-23
Information query
IPC分类: