According to one embodiment, a semiconductor device includes first and second electrodes, first to fifth semiconductor regions, and a gate electrode. The first semiconductor region is provided on the first electrode, and electrically connected to the first electrode. The second semiconductor region is provided on a part of the first semiconductor region. The third semiconductor region is provided on another part of the first semiconductor region. The third semiconductor region includes first and second regions. The fourth semiconductor region is provided on the second semiconductor region. The fifth semiconductor region is provided on a part of the fourth semiconductor region. The gate electrode faces the fourth semiconductor region with a gate insulating layer interposed between the gate electrode and the fourth semiconductor region. The second electrode is provided on the fourth and fifth semiconductor regions. The second electrode is electrically connected to the fourth and fifth semiconductor regions.