Invention Grant
- Patent Title: Semiconductor device including three-dimensional field-effect transistor with curved multi-layered source/drain pattern
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Application No.: US17141513Application Date: 2021-01-05
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Publication No.: US11688778B2Publication Date: 2023-06-27
- Inventor: Ryong Ha , Dongwoo Kim , Gyeom Kim , Yong Seung Kim , Pankwi Park , Seung Hun Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR 20200005365 2020.01.15
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L29/423 ; H01L29/10

Abstract:
A semiconductor device including an active pattern extending in a first direction; a channel pattern on the active pattern and including vertically stacked semiconductor patterns; a source/drain pattern in a recess in the active pattern; a gate electrode on the active pattern and extending in a second direction crossing the first direction, the gate electrode surrounding a top surface, at least one side surface, and a bottom surface of each of the semiconductor patterns; and a gate spacer covering a side surface of the gate electrode and having an opening to the semiconductor patterns, wherein the source/drain pattern includes a buffer layer covering inner sides of the recess, the buffer layer includes an outer side surface and an inner side surface, which are opposite to each other, and each of the outer and inner side surfaces is a curved surface that is convexly curved toward a closest gate electrode.
Public/Granted literature
- US20210217860A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-07-15
Information query
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