Invention Grant
- Patent Title: HEMT and method of fabricating the same
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Application No.: US17143135Application Date: 2021-01-06
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Publication No.: US11688790B2Publication Date: 2023-06-27
- Inventor: Chih-Wei Chang , Yao-Hsien Chung , Shih-Wei Su , Hao-Hsuan Chang , Da-Jun Lin , Ting-An Chien , Bin-Siang Tsai
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN 2011344582.7 2020.11.26
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/66 ; H01L29/20 ; H01L29/423
Abstract:
An HEMT includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer. The composition of the first III-V compound layer is different from the composition of the second III-V compound layer. A trench is disposed within the first III-V compound layer and the second III-V compound layer. The trench has a first corner and a second corner. The first corner and the second corner are disposed in the first III-V compound layer. A first dielectric layer contacts a sidewall of the first corner. A second dielectric layer contacts a sidewall of the second corner. The first dielectric layer and the second dielectric layer are outside of the trench. A gate is disposed in the trench. A source electrode and a drain electrode are respectively disposed at two sides of the gate. A gate electrode is disposed directly on the gate.
Public/Granted literature
- US20220165866A1 HEMT AND METHOD OF FABRICATING THE SAME Public/Granted day:2022-05-26
Information query
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