Invention Grant
- Patent Title: Semiconductor device structure
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Application No.: US17233451Application Date: 2021-04-17
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Publication No.: US11688809B2Publication Date: 2023-06-27
- Inventor: Kuo-Cheng Ching , Kuan-Ting Pan , Kuan-Lun Cheng , Chih-Hao Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L27/088 ; H01L29/16 ; H01L21/8234

Abstract:
A semiconductor device structure includes a fin structure, a semiconductive capping layer, an oxide layer, and a gate structure. The fin structure protrudes above a substrate. The semiconductive capping layer wraps around three sides of a channel region of the fin structure. The oxide layer wraps around three sides of the semiconductive capping layer. A thickness of a top portion of the semiconductive capping layer is less than a thickness of a top portion of the oxide layer. The gate structure wraps around three sides of the oxide layer.
Public/Granted literature
- US20210234036A1 SEMICONDUCTOR DEVICE STRUCTURE Public/Granted day:2021-07-29
Information query
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