Invention Grant
- Patent Title: Magnetoresistance effect element and magnetic memory
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Application No.: US16768564Application Date: 2018-12-14
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Publication No.: US11690299B2Publication Date: 2023-06-27
- Inventor: Hideo Sato , Shinya Ishikawa , Shunsuke Fukami , Hideo Ohno , Tetsuo Endoh
- Applicant: Tohoku University
- Applicant Address: JP Miyagi
- Assignee: Tohoku University
- Current Assignee: Tohoku University
- Current Assignee Address: JP Miyagi
- Agency: Procopio, Cory, Hargreaves & Savitch LLP
- Priority: JP 2018002111 2018.01.10
- International Application: PCT/JP2018/046036 2018.12.14
- International Announcement: WO2019/138778A 2019.07.18
- Date entered country: 2020-09-21
- Main IPC: H10N52/80
- IPC: H10N52/80 ; H10B61/00 ; H10N50/85 ; H10N52/00
Abstract:
Provided is an X-type 3-terminal STT-MRAM (spin orbital torque magnetization reversal component) having a high thermal stability index Δ and a low writing current IC in a balanced manner. A magnetoresistance effect element has a configuration of channel layer (1)/barrier layer non adjacent magnetic layer (2b)/barrier layer adjacent magnetic layer (2a)/barrier layer (3).
Public/Granted literature
- US20210005808A1 MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY Public/Granted day:2021-01-07
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