A phase change memory (PCM) cell comprising a substrate a first electrode located on the substrate. A phase change material layer located adjacent to the first electrode, wherein a first side of the phase change material layer is in direct contact with the first electrode. A second electrode located adjacent to phase change material layer, wherein the second electrode is in direct contact with a second side of the phase change material layer, wherein the first side and the second side are different sides of the phase change material layer. An airgap is located directly above the phase change material layer, wherein the airgap provides space for the phase change material to expand or restrict.