Invention Grant
- Patent Title: Nitride phosphor, method for manufacturing the same, and light emitting device
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Application No.: US17806442Application Date: 2022-06-10
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Publication No.: US11692135B2Publication Date: 2023-07-04
- Inventor: Shigeyuki Suzuki , Hiroyuki Watanabe , Shoji Hosokawa
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan
- Agency: Hunton Andrews Kurth LLP
- Priority: JP 2021098090 2021.06.11 JP 2021168122 2021.10.13
- Main IPC: C09K11/80
- IPC: C09K11/80 ; C09K11/77 ; B22F3/10

Abstract:
A nitride phosphor having a composition containing Eu, Si, Al, N, and a group 2 element including at least one selected from the group consisting of Mg, Ca, Sr, and Ba. In the composition, a ratio of a total molar content of the group 2 element and Eu to a molar content of Al is 0.8 or more and 1.1 or less, a molar ratio of Eu is 0.002 or more and 0.08 or less, a molar ratio of Si is 0.8 or more and 1.2 or less, and a total molar ratio of Si and Al is 1.8 or more and 2.2 or less. The nitride phosphor has a first peak in a range of 17° 2θ or more and 19° 2θ or less and a second peak in a range of 34° 2θ or more and 35.5° 2θ or less in a CuKα powder X-ray diffraction pattern.
Public/Granted literature
- US20220396731A1 NITRIDE PHOSPHOR, METHOD FOR MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE Public/Granted day:2022-12-15
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