- Patent Title: Probe device, test device, and test method for semiconductor device
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Application No.: US17308974Application Date: 2021-05-05
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Publication No.: US11693030B2Publication Date: 2023-07-04
- Inventor: Hyungmin Jin , Jindo Byun , Younghoon Son , Youngdon Choi , Junghwan Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR 20200122196 2020.09.22
- Main IPC: G01R1/20
- IPC: G01R1/20 ; G01R1/067 ; G01R31/26

Abstract:
A probe device includes a first receiving terminal configured to receive a multi-level signal having M levels, where M is a natural number greater than 2; a second receiving terminal configured to receive a reference signal; a receiving buffer including a first input terminal connected to the first receiving terminal, a second input terminal connected to the second receiving terminal, and an output terminal configured to output the multi-level signal based on signals received from the first and second input terminals; and a resistor circuit comprising a plurality of resistors connected to the first and second receiving terminals and determining a magnitude of a termination resistance of the first and second receiving terminals.
Public/Granted literature
- US20220091158A1 PROBE DEVICE, TEST DEVICE, AND TEST METHOD FOR SEMICONDUCTOR DEVICE Public/Granted day:2022-03-24
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