- Patent Title: Phase shift device including metal-dielectric composite structure
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Application No.: US17519347Application Date: 2021-11-04
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Publication No.: US11693237B2Publication Date: 2023-07-04
- Inventor: Jeongyub Lee , Reehyang Kim , Jonghwa Shin , Kiyeon Yang , Yongsung Kim , Jaekwan Kim , Changseung Lee , Narae Han
- Applicant: SAMSUNG ELECTRONICS CO., LTD. , KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.,KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.,KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee Address: KR Suwon-si; KR Daejeon
- Agency: Sughrue Mion, PLLC
- Priority: KR 20180163314 2018.12.17
- Main IPC: G02B27/00
- IPC: G02B27/00 ; G02B1/00 ; G02B3/02 ; G02B5/08

Abstract:
A phase shifting device may include a plurality of metal layers and a plurality of first dielectric layers, a metal layer of the plurality of metal layers and a first dielectric layer of the plurality of first dielectric layers being alternately stacked in a first direction, and a second dielectric layer disposed on a side surface of the stacked structure in a second direction, wherein the first dielectric layer includes a first material having a first dielectric constant and the second dielectric layer includes a second material having a second dielectric constant, and wherein the second dielectric constant is greater than the first dielectric constant.
Public/Granted literature
- US20220082822A1 PHASE SHIFT DEVICE INCLUDING METAL-DIELECTRIC COMPOSITE STRUCTURE Public/Granted day:2022-03-17
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