- 专利标题： Methods of forming metal gate spacer
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申请号： US16218330申请日： 2018-12-12
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公开(公告)号： US11694933B2公开(公告)日： 2023-07-04
- 发明人: Yen-Ting Chen , Yi-Hsiu Liu , Wei-Yang Lee , Feng-Cheng Yang , Yen-Ming Chen
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L29/78 ; H01L29/66 ; H01L27/092
摘要：
A method includes providing dummy gate structures disposed over a device region and over an isolation region adjacent the active region, first gate spacers disposed along sidewalls of the dummy gate structures in the active region, and second gate spacers disposed along sidewalls of the dummy gate structures in the isolation region, removing top portions of the second, but not the first gate spacers, forming a first dielectric layer over the first gate spacers and remaining portions of the second gate spacers, replacing the dummy gate structures with metal gate structures after the forming of the first dielectric layer, removing the first gate spacers after the replacing of the dummy gate structures, and forming a second dielectric layer over top surfaces of the metal gate structures and of the first dielectric layer.
公开/授权文献
- US20200006158A1 Methods of Forming Metal Gate Spacer 公开/授权日：2020-01-02
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