- 专利标题: Method for continuously mass-manufacturing graphene using high-temperature plasma emission method and graphene manufactured by manufacturing method
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申请号: US17394356申请日: 2021-08-04
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公开(公告)号: US11697593B2公开(公告)日: 2023-07-11
- 发明人: Kyoung Jeong Bae , Sul Hwa Choi , Dinh Huong Nguyen
- 申请人: KB-ELEMENT Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: KB-ELEMENT Co., Ltd.
- 当前专利权人: KB-ELEMENT Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Revolution IP, PLLC
- 优先权: KR 20200155961 2020.11.19
- 主分类号: C01B32/19
- IPC分类号: C01B32/19
摘要:
A method for continuously mass-manufacturing graphene using thermal plasma, the method for continuously mass-manufacturing graphene includes the steps of: (a) injecting an inert gas into a plasma device to generate plasma; (b) injecting expandable graphite and graphite intercalation compounds (GIC) into the plasma device in constant amounts; and (c) allowing the expandable graphite and GIC to be expanded by thermal plasma treatment so that graphene is exfoliated.
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