Invention Grant
- Patent Title: Charge loss scan operation management in memory devices
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Application No.: US17157220Application Date: 2021-01-25
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Publication No.: US11704217B2Publication Date: 2023-07-18
- Inventor: Michael Sheperek , Steven Michael Kientz , Shane Nowell , Mustafa N. Kaynak , Kishore Kumar Muchherla , Larry J. Koudele
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Lowenstein Sandler LLP
- Main IPC: G06F11/30
- IPC: G06F11/30 ; G06F3/06 ; G06F11/07

Abstract:
A memory system includes a memory device and a processing device, operatively coupled to the memory device. The processing device performs operations comprising: identifying an operating temperature of the memory device; determining that the operating temperature satisfies a temperature condition; modifying a scan frequency parameter for performing a scan operation on representative blocks of a set of blocks in the memory device; and performing the scan operation at a frequency identified by the scan frequency parameter.
Public/Granted literature
- US20220237094A1 CHARGE LOSS SCAN OPERATION MANAGEMENT IN MEMORY DEVICES Public/Granted day:2022-07-28
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