Invention Grant
- Patent Title: Integrated circuit, system for and method of forming an integrated circuit
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Application No.: US17106876Application Date: 2020-11-30
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Publication No.: US11704465B2Publication Date: 2023-07-18
- Inventor: Jung-Chan Yang , Ting-Wei Chiang , Cheng-I Huang , Hui-Zhong Zhuang , Chi-Yu Lu , Stefan Rusu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G06F30/394
- IPC: G06F30/394 ; H01L23/528 ; H01L21/76 ; H03K19/094 ; H01L23/522

Abstract:
An integrated circuit structure includes a first and second power rail extending in a first direction and being located at a first level, a first and second set of conductive structures located at a second level and extending in a second direction, a first and second set of vias, and a first and second conductive structure located at a third level and extending in the second direction. The first set of vias coupling the first power rail to the first set of conductive structures. The second set of vias coupling the second power rail to the second set of conductive structures. The first conductive structure overlaps a first conductive structure of the first set of conductive structures and the second set of conductive structures. The second conductive structure overlaps a second conductive structure of the first set of conductive structures and the second set of conductive structures.
Public/Granted literature
- US20210082739A1 INTEGRATED CIRCUIT, SYSTEM FOR AND METHOD OF FORMING AN INTEGRATED CIRCUIT Public/Granted day:2021-03-18
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