Invention Grant
- Patent Title: Memory device, memory system including the same and operating method thereof
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Application No.: US17567306Application Date: 2022-01-03
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Publication No.: US11705172B2Publication Date: 2023-07-18
- Inventor: Hojun Chang , Hundae Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20210074166 2021.06.08
- Main IPC: G11C7/22
- IPC: G11C7/22 ; G11C7/10 ; G11C8/18 ; G11C29/02

Abstract:
A method of operating a memory device includes receiving a duty training request, performing first training for a write path in a first period, storing a result value of the first training, performing second training for a write path in a second period, storing a result value of the second training, transmitting the result value of the first training to an external device, and receiving a duty cycle adjuster (DCA) code value corresponding to the first training result value from the external device.
Public/Granted literature
- US20220392503A1 MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE SAME AND OPERATING METHOD THEREOF Public/Granted day:2022-12-08
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