- Patent Title: Variable frequency and non-sinusoidal power generator using double side cooling, plasma processing apparatus including the same and method of manufacturing semiconductor device using the same
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Application No.: US17470337Application Date: 2021-09-09
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Publication No.: US11705306B2Publication Date: 2023-07-18
- Inventor: Hyunbae Kim , Hyunjae Lee , Youngdo Kim , Hyejin Kim , Sangki Nam , Chanhee Park , Minho Jung
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20210021626 2021.02.18
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
A variable frequency and non-sinusoidal power generator includes a pulse module circuit, a slope module circuit, and first and second cooling systems. The pulse module circuit and the slope module circuit includes control switches, and generates at least one of a output currents and a output voltages by selectively turning on/off the control switches based on control signals. The first and second cooling systems are disposed at first and second sides of the control switches. A bias power having a variable frequency and a non-sinusoidal waveform is generated based on the control signals, at least one of the output currents and the output voltages.
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