Invention Grant
- Patent Title: Photoresist layer surface treatment, cap layer, and method of forming photoresist pattern
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Application No.: US17150403Application Date: 2021-01-15
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Publication No.: US11705332B2Publication Date: 2023-07-18
- Inventor: Yi-Chen Kuo , Chih-Cheng Liu , Ming-Hui Weng , Jia-Lin Wei , Yen-Yu Chen , Jr-Hung Li , Yahru Cheng , Chi-Ming Yang , Tze-Liang Lee , Ching-Yu Chang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/027 ; H01L21/02
Abstract:
A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate, and reducing moisture or oxygen absorption characteristics of the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.
Public/Granted literature
- US20210305040A1 PHOTORESIST LAYER SURFACE TREATMENT, CAP LAYER, AND METHOD OF FORMING PHOTORESIST PATTERN Public/Granted day:2021-09-30
Information query
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