Invention Grant
- Patent Title: Methods of forming electronic devices with channel openings or pillars extending through a tier stack
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Application No.: US18053134Application Date: 2022-11-07
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Publication No.: US11706925B2Publication Date: 2023-07-18
- Inventor: John D. Hopkins , Nancy M. Lomeli , Justin B. Dorhout , Damir Fazil
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- The original application number of the division: US17032384 2020.09.25
- Main IPC: H10B43/27
- IPC: H10B43/27 ; H10B43/35 ; H10B43/40 ; H10B41/27 ; H10B41/35 ; H10B41/41 ; H01L21/311 ; H01L21/02

Abstract:
Device, systems, and structures include a stack of vertically-alternating tiers of materials arranged in one or more decks of tiers. A channel opening, in which a channel pillar may be formed, extends through the stack. The pillar includes a “shoulder portion” extending laterally into an “undercut portion” of the channel opening, which undercut portion is defined along at least a lower tier of at least one of the decks of the stack.
Public/Granted literature
- US20230092501A1 METHODS OF FORMING ELECTRONIC DEVICES WITH CHANNEL OPENINGS OR PILLARS EXTENDING THROUGH A TIER STACK Public/Granted day:2023-03-23
Information query