- 专利标题： Process of forming a high electron mobility transistor including a gate electrode layer spaced apart from a silicon nitride film
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申请号： US17163115申请日： 2021-01-29
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公开(公告)号： US11710773B2公开(公告)日： 2023-07-25
- 发明人: Kenta Sugawara , Yukinori Nose
- 申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD. , SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- 申请人地址： JP Osaka
- 专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人地址： JP Osaka
- 代理机构： Smith, Gambrell & Russell, LLP.
- 优先权： JP 18026770 2018.02.19
- 分案原申请号： US16279649 2019.02.19
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L29/40 ; H01L29/20 ; H01L29/205 ; H01L29/47 ; H01L29/66 ; H01L21/02 ; H01L21/311 ; H01L21/285 ; H01L29/778 ; H01L29/423 ; H01L29/417 ; H01L21/027
摘要：
A semiconductor device and a process of forming the semiconductor device are disclosed. The semiconductor device type of a high electron mobility transistor (HEMT) has double SiN films on a semiconductor layer, where the first SiN film is formed by the lower pressure chemical vapor deposition (LPCVD) technique, while, the second SiN film is deposited by the plasma assisted CVD (p-CVD) technique. Moreover, the gate electrode has an arrangement of double metals, one of which contains nickel (Ni) as a Schottky metal, while the other is free from Ni and covers the former metal. A feature of the invention is that the first metal is in contact with the semiconductor layer but apart from the second SiN film.
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