- 专利标题： TFT substrate and display device including the same
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申请号： US16418406申请日： 2019-05-21
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公开(公告)号： US11710793B2公开(公告)日： 2023-07-25
- 发明人: Dong-Chae Shin , Won-Sang Ryu , Kyung-Mo Son
- 申请人： LG Display Co., Ltd.
- 申请人地址： KR Seoul
- 专利权人： LG Display Co., Ltd.
- 当前专利权人： LG Display Co., Ltd.
- 当前专利权人地址： KR Seoul
- 代理机构： Seed IP Law Group LLP
- 优先权： KR 20180059462 2018.05.25
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L27/12 ; H01L29/08 ; H01L29/66
摘要：
A thin film transistor (TFT) substrate includes a TFT on the substrate. The TFT includes an active patterned layer which is made of a polycrystalline silicon, which includes a channel portion, a source portion and a drain portion, and in which protrusions are formed at boundaries between grains and recess spaces are formed between the protrusions. A barrier pattern film fills the recess spaces and forms a flat surface with the protrusions. A gate electrode is on a gate insulating layer located on the barrier pattern film and the protrusions and overlays or corresponds to the channel portion. A source electrode and a drain electrode are on the gate electrode and respectively contact the source portion and the drain portion.
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