- 专利标题: Electronic device and method of manufacturing the same
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申请号: US17496299申请日: 2021-10-07
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公开(公告)号: US11711923B2公开(公告)日: 2023-07-25
- 发明人: Jinseong Heo , Yunseong Lee , Sanghyun Jo
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR 20180096827 2018.08.20
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L29/40 ; H10B51/30 ; H01L29/66 ; G11C11/22 ; H01L21/28 ; G06N3/065
摘要:
Provided are an electronic device and a method of manufacturing the same. The electronic device may include a first device provided on a first region of a substrate; and a second device provided on a second region of the substrate, wherein the first device may include a first domain layer including a ferroelectric domain and a first gate electrode on the first domain layer, and the second device may include a second domain layer including a ferroelectric domain and a second gate electrode on the second domain layer. The first domain layer and the second domain layer may have different characteristics from each other at a polarization change according to an electric field. At the polarization change according to the electric field, the first domain layer may have substantially a non-hysteretic behavior characteristic and the second domain layer may have a hysteretic behavior characteristic.
公开/授权文献
- US20220028872A1 ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME 公开/授权日:2022-01-27
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