Invention Grant
- Patent Title: Quantum dot devices with trenched substrates
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Application No.: US17401692Application Date: 2021-08-13
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Publication No.: US11721737B2Publication Date: 2023-08-08
- Inventor: Ravi Pillarisetty , Van H. Le , Jeanette M. Roberts , David J. Michalak , James S. Clarke , Zachary R. Yoscovits
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Akona IP
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/417 ; H01L29/66 ; H01L29/775 ; H01L29/78 ; H01L29/06 ; H01L29/778 ; H01L29/165

Abstract:
Disclosed herein are quantum dot devices with trenched substrates, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a substrate having a trench disposed therein, wherein a bottom of the trench is provided by a first material, and a quantum well stack at least partially disposed in the trench. A material of the quantum well stack may be in contact with the bottom of the trench, and the material of the quantum well stack may be different from the first material.
Public/Granted literature
- US20210376102A1 QUANTUM DOT DEVICES WITH TRENCHED SUBSTRATES Public/Granted day:2021-12-02
Information query
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