- 专利标题: Low resistance composite silicon-based electrode
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申请号: US16994813申请日: 2020-08-17
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公开(公告)号: US11721801B2公开(公告)日: 2023-08-08
- 发明人: John Collins , Teodor Krassimirov Todorov , Ali Afzali-Ardakani , Joel P. de Souza , Devendra K. Sadana
- 申请人: International Business Machines Corporation
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation, Armonk
- 当前专利权人: International Business Machines Corporation, Armonk
- 当前专利权人地址: US NY Armonk
- 代理机构: Otterstedt & Kammer PLLC
- 代理商 Daniel Morris
- 主分类号: H01M4/1395
- IPC分类号: H01M4/1395 ; H01L21/02 ; H01M4/36 ; H01M4/38 ; H01M4/40
摘要:
A silicon-based electrode forms an interface with a layer pair being: 1. a thin, semi-dielectric layer made of a lithium (Li) compound, e.g. lithium fluoride, LiF, disposed on and adheres to the electrode surface of the silicon-based electrode and 2. an molten-ion conductive layer of a lithium containing salt (lithium salt layer) disposed on the semi-dielectric layer. One or more device layers can be disposed on the layer pair to make devices such as energy storage devices, like batteries. The interface has a low resistivity that reduces the energy losses and generated heat of the devices.
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